DocumentCode :
1470100
Title :
Withdrawal of "Fabrication and Properties of 
Structure for Ferro
Author :
Xie, Dan ; Zang, Yongyuan ; Luo, Yafeng ; Ren, Tianling ; Liu, Litian
Volume :
30
Issue :
10
fYear :
2009
Firstpage :
1111
Lastpage :
1111
Abstract :
This paper [ibid., vol. 30, no. 5, pp. 463??465, May 2009] is withdrawn at the request of the authors. The lead author has made errors in the IEEE member grades of the coauthors and not all the coauthors have prior knowledge of the submission by the lead author.
Keywords :
Bismuth; Electron devices; Ferroelectric materials; Hafnium oxide; IEEE members; Information science; Microelectronics; Neodymium; Random access memory;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2031531
Filename :
5264816
Link To Document :
