• DocumentCode
    1470100
  • Title

    Withdrawal of "Fabrication and Properties of \\hbox {Pt}/\\hbox {Bi}_{3.15}\\hbox {Nd}_{0.85}\\hbox {Ti}_{3}\\hbox {O}_{12}/\\hbox {HfO}_{2}/\\hbox {Si} Structure for Ferro

  • Author

    Xie, Dan ; Zang, Yongyuan ; Luo, Yafeng ; Ren, Tianling ; Liu, Litian

  • Volume
    30
  • Issue
    10
  • fYear
    2009
  • Firstpage
    1111
  • Lastpage
    1111
  • Abstract
    This paper [ibid., vol. 30, no. 5, pp. 463??465, May 2009] is withdrawn at the request of the authors. The lead author has made errors in the IEEE member grades of the coauthors and not all the coauthors have prior knowledge of the submission by the lead author.
  • Keywords
    Bismuth; Electron devices; Ferroelectric materials; Hafnium oxide; IEEE members; Information science; Microelectronics; Neodymium; Random access memory;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2031531
  • Filename
    5264816
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1470100