Title :
A high-speed twin-capacitor BiNMOS (TC-BiNMOS) logic circuit for single battery operation
Author :
Yeo, Kiat-Seng ; Lee, Heng-Kah ; DO, Manh-Anh
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
4/1/2001 12:00:00 AM
Abstract :
This paper presents a novel BiNMOS logic gate specially designed for single battery operation (1.2-1.5 V). Through the use of two capacitors, in the pre-charging and bootstrapping cycles, the circuit achieves a high-speed and full-swing operation. Analytical expressions for the circuit were derived, and the main design considerations were addressed. Based on a 0.5 μm BiCMOS technology, HSPICE simulation results have proven the superiority of the new circuit over the CMOS, BFBiNMOS and BSBiNMOS circuits in terms of speed and power consumption. The circuit also occupies the smallest area amongst the BiNMOS families. A 75-stage ring oscillator of the new circuit was fabricated using a 0.8 μm BiCMOS process, and the measured gate delay/stage is merely 1.32 ns at a supply voltage of 1.5 V and a load capacitance of 1 pF
Keywords :
BIMOS integrated circuits; SPICE; circuit CAD; circuit simulation; delays; high-speed integrated circuits; integrated circuit design; integrated logic circuits; logic CAD; low-power electronics; 0.8 micron; 1 pF; 1.2 to 1.5 V; 1.32 ns; 1.5 V; BiNMOS logic circuit; HSPICE simulation; TC-BiNMOS; bootstrapping cycles; design considerations; full-swing operation; gate delay; high-speed twin-capacitor BiNMOS; load capacitance; power consumption; pre-charging cycles; ring oscillator; single battery operation; supply voltage; Batteries; BiCMOS integrated circuits; CMOS technology; Capacitors; Circuit simulation; Energy consumption; Logic circuits; Logic design; Logic gates; Ring oscillators;
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
