Very accurate high-frequency noise spectral analysis of P-channel FET´s

Author

Svelto, Francesco

Author_Institution

Facolta´´ di Ingegneria, Bergamo Univ., Dalmine, Italy

Volume

47

Issue

2

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

417

Lastpage

422

Abstract

A bench-unit instrument to interface single FET devices to spectrum analyzers for noise investigation has been realized. It consists of an ultra low-noise amplifier which raises the noise of the device-under-test well above the intrinsic limits of the analyzers. It is estimated that the intrinsic contribution of the amplifier is 100 pV/√Hz in the frequency range 100 Hz to 10 MHz. Preliminary results lead to the possibility to analyze PMOSEET devices, belonging to a 0.8 μm CMOS technology, for which a noise model is proposed

Keywords

CMOS analogue integrated circuits; MOSFET; electric noise measurement; feedback amplifiers; instrumentation amplifiers; integrated circuit noise; operational amplifiers; preamplifiers; semiconductor device noise; spectral analysers; spectral analysis; 100 Hz to 10 MHz; CMOS technology; P-channel FET; PMOSEET devices; accurate HF noise spectral analysis; bench-unit instrument; cascaded amplifiers; feedback amplifiers; intrinsic amplifier contribution; noise model; single FET device interface; spectrum analyzers; ultra low-noise amplifier; Bandwidth; Circuit noise; FETs; Feedback; Frequency; Instruments; Low-frequency noise; Low-noise amplifiers; Spectral analysis; Voltage;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.744184

Filename

744184