DocumentCode
1470211
Title
AlGaAs Schottky reflection modulator and detector for Gbit/s optical transmission systems
Author
Prank, U. ; Kowalsky, Wolfgang ; Hackbarth, Thomas ; Ebeling, K.J.
Author_Institution
Inst. fur Hochfrequenztech., Tech. Univ. of Braunschweig, West Germany
Volume
25
Issue
13
fYear
1989
fDate
6/22/1989 12:00:00 AM
Firstpage
847
Lastpage
849
Abstract
An electro-optic reflection modulator operated at incidence normal to the surface is presented attaining a switching contrast of 87:1 up to Gbit/s bit rates. The underlying mechanism is electroabsorption in the multilayered AlGaAs device. Operating the device for photodetection, the authors achieve a responsivity of about 1 A/W.
Keywords
III-V semiconductors; Schottky-barrier diodes; aluminium compounds; electro-optical devices; gallium arsenide; optical communication equipment; optical modulation; optoelectronic devices; photodetectors; 1 Gbit/s; AlGaAs Schottky reflection modulator; Gbit/s bit rates; Gbit/s optical transmission systems; Schottky reflection detector; electro-optic reflection modulator; electroabsorption; multilayered AlGaAs device; on off ratio; responsivity; semiconductors; switching contrast;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890571
Filename
91799
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