DocumentCode
1470436
Title
High-efficiency pulsed GaAs pin avalanche diodes for V-band oscillators
Author
Huber, Samuel ; Claassen, M. ; Grothe, H.
Author_Institution
Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektronic Tech. Univ. Munchen, West Germany
Volume
25
Issue
13
fYear
1989
fDate
6/22/1989 12:00:00 AM
Firstpage
855
Lastpage
856
Abstract
GaAs pin avalanche diodes have been fabricated for millimetre-wave frequencies using molecular beam epitaxy. The highest obtained pulsed output power was 15 W with 8% efficiency at 50.1 GHz. The maximum observed efficiency was 11.1% at 57.4 GHz and 8.3 W output power.
Keywords
III-V semiconductors; avalanche diodes; gallium arsenide; microwave generation; microwave oscillators; molecular beam epitaxial growth; p-i-n diodes; solid-state microwave devices; 50.1 to 57.4 GHz; 8 to 11 percent; 8.3 to 15 W; EHF; GaAs pin avalanche diodes; MBE; V-band oscillators; efficiency; millimetre-wave frequencies; molecular beam epitaxy; p-i-n avalanche diodes; pulsed operation; pulsed output power; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890576
Filename
91803
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