• DocumentCode
    1470463
  • Title

    Characterization of Lead-Free Solder and Sintered Nano-Silver Die-Attach Layers Using Thermal Impedance

  • Author

    Cao, Xiao ; Wang, Tao ; Ngo, Khai D T ; Lu, Guo-Quan

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • Volume
    1
  • Issue
    4
  • fYear
    2011
  • fDate
    4/1/2011 12:00:00 AM
  • Firstpage
    495
  • Lastpage
    501
  • Abstract
    Since a die-attach layer has a significant impact on the thermal performance of a power module, its quality can be characterized using thermal performance. In this paper, a measurement system for thermal impedance is developed to evaluate three die-attach materials. Thanks to its high temperature sensitivity (10 mV/°C), the gate-emitter voltage of an insulated gate bipolar transistor (IGBT) is used as the temperature-sensitive parameter. The power dissipation in the IGBT remains constant by a feedback loop, regardless of the junction temperature. Experimental results show that the sample using sintered nano-silver for the die-attach has 12.1% lower thermal impedance than the samples using SAC305 and SN100C solders. To check the degradation of the die-attachment, six samples using three die-attach materials were thermally cycled from -40 to 125°C. The experimental results show that, after 500 cycles, the thermal impedance of SAC305 samples and SN100C samples is increased by 12.9% and 13.3%, respectively, which are much higher than that of the sample using the sintered nano-silver for the die-attach (3.1%).
  • Keywords
    insulated gate bipolar transistors; silver; sintering; solders; thermal analysis; SAC305 solders; SN100C solders; feedback loop; gate-emitter voltage; insulated gate bipolar transistor; junction temperature; lead-free solder; sintered nano-silver die-attach layers; temperature -40 degC to 125 degC; temperature sensitivity; thermal impedance; thermal performance; Heating; Impedance; Impedance measurement; Insulated gate bipolar transistors; Logic gates; Semiconductor device measurement; Temperature measurement; Die-attach; lead-free solder; power insulated gate bipolar transistor; sintered nano-silver; thermal cycling; thermal impedance measurement;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2011.2104958
  • Filename
    5729793