Title :
Modelocking of AlGaAs laser diode by intracavity AlGaAs phase modulator
Author :
Bosl, J. ; Bauer, Ralf ; Rauch, H. ; Penning, U. ; Weimann, G. ; Schlapp, W.
Author_Institution :
Lehrstuhl fur Tech. Elektron., Tech. Univ. Munchen, West Germany
fDate :
6/22/1989 12:00:00 AM
Abstract :
Active modelocking of an 830 nm AlGaAs laser diode by an intracavity AlGaAs phase-modulator is reported. The typical states of modelocking by pure phase-modulation, the even state, the odd state and double pulsing are demonstrated. The behaviour of a semiconductor laser in this experiment corresponds to that one known from the HeNe laser and Nd:YAG laser.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; optical modulation; phase modulation; semiconductor junction lasers; 830 nm; AlGaAs laser diode; active modelocking; experiment; intracavity AlGaAs phase modulator; pure phase-modulation; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890582
