• DocumentCode
    1470500
  • Title

    Modelocking of AlGaAs laser diode by intracavity AlGaAs phase modulator

  • Author

    Bosl, J. ; Bauer, Ralf ; Rauch, H. ; Penning, U. ; Weimann, G. ; Schlapp, W.

  • Author_Institution
    Lehrstuhl fur Tech. Elektron., Tech. Univ. Munchen, West Germany
  • Volume
    25
  • Issue
    13
  • fYear
    1989
  • fDate
    6/22/1989 12:00:00 AM
  • Firstpage
    864
  • Lastpage
    866
  • Abstract
    Active modelocking of an 830 nm AlGaAs laser diode by an intracavity AlGaAs phase-modulator is reported. The typical states of modelocking by pure phase-modulation, the even state, the odd state and double pulsing are demonstrated. The behaviour of a semiconductor laser in this experiment corresponds to that one known from the HeNe laser and Nd:YAG laser.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; optical modulation; phase modulation; semiconductor junction lasers; 830 nm; AlGaAs laser diode; active modelocking; experiment; intracavity AlGaAs phase modulator; pure phase-modulation; semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890582
  • Filename
    91809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1470500