Title :
The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
Author :
Wang, Xiao-Dong ; Hu, Wei-Da ; Chen, Xiao-Shuang ; Lu, Wei
Author_Institution :
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
fDate :
5/1/2012 12:00:00 AM
Abstract :
The direct current characteristics of AlGaN/GaN double-channel HEMTs (DC-HEMTs) are investigated by using 2-D numerical simulations. The output characteristics have been predicted with the drift-diffusion, thermodynamic, hydrodynamic, and hot-electron models, respectively. The prediction by the hydrodynamic model is in good agreement with the experiment. It is demonstrated that the hot-electron effect makes a negligible contribution to the negative differential conductance (NDC) of an AlGaN/GaN DC-HEMT; instead, the NDC effect is caused by the self-heating effect. The transfer and transconductance characteristics of an AlGaN/GaN DC-HEMT are also discussed in detail. Finally, a new In0.18Al0.82N /GaN/AlGaN/GaN DC-HEMT structure is proposed for optimizing AlGaN/GaN DC-HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; diffusion; gallium compounds; high electron mobility transistors; hot carriers; hydrodynamics; numerical analysis; semiconductor device models; thermodynamics; wide band gap semiconductors; 2D numerical simulations; AlGaN-GaN; DC-HEMT; NDC effect; direct current characteristics; double-channel HEMT; drift-diffusion model; hot-electron effects; hot-electron models; hydrodynamic model; negative differential conductance; self-heating effect; thermodynamic model; transconductance characteristics; Aluminum gallium nitride; Gallium nitride; HEMTs; Lattices; MODFETs; Mathematical model; Thermodynamics; Double-channel HEMTs (DC-HEMTs); III–V semiconductors; hot-electron effect; self-heating effect;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2188634
