Title :
W-band GaAs camel-cathode Gunn devices produced by MBE
Author :
Beall, R.B. ; Grecian, P.J. ; Jones, Simon ; Smith, Graeme
Author_Institution :
Philips Res. Labs., Redhill, UK
fDate :
6/22/1989 12:00:00 AM
Abstract :
The DC and microwave performance of a novel second-harmonic W-band GaAs Gunn device incorporating a camel barrier are reported. Comparison with conventional Gunn devices shows significant improvement in power output and DC to RF conversion efficiency for the new structure. The frequency at which the maximum power is produced is lower for the camel cathode Gunn device, an observation attributed to a reduction in the length of the acceleration zone.
Keywords :
Gunn diodes; III-V semiconductors; gallium arsenide; microwave generation; molecular beam epitaxial growth; DC to RF conversion efficiency; EHF; GaAs; MBE; MM-waves; W-band; acceleration zone; camel barrier; camel-cathode Gunn devices; maximum power frequency; microwave performance; power output; second-harmonic; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890587
