Title : 
Numerical Study on Metal Cavity Couplers for Terahertz Quantum-Well Photodetectors
         
        
            Author : 
Guo, Xuguang ; Zhang, Rong ; Cao, Juncheng ; Liu, Huichun
         
        
            Author_Institution : 
Key Lab. of Terahertz Solid-State Technol., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
         
        
        
        
        
            fDate : 
5/1/2012 12:00:00 AM
         
        
        
        
            Abstract : 
Metal cavities composed of metal gratings, layered semiconductor structures, and bottom metal layers are proposed as light couplers for terahertz quantum-well photodetectors (QWPs). Due to a strong waveguide effect, the coupling properties of the metal cavities are significantly changed in comparison with the case of metal-grating-coupled terahertz QWPs. Numerical calculations show that there are two resonant coupling peaks for the sub-wavelength metal cavity couplers, with one located at the lower side of the first grating diffraction mode and the other at the upper side. A simple ray propagation picture explains the behaviors of the two resonant coupling peaks on a qualitative level. Our numerical data show that the coupling efficiencies of metal cavity couplers are several tens of times higher than that of the 45-degree facet coupling scheme.
         
        
            Keywords : 
diffraction gratings; numerical analysis; optical couplers; photodetectors; quantum well devices; bottom metal layers; coupling efficiencies; coupling properties; grating diffraction mode; layered semiconductor structures; light couplers; metal gratings; numerical calculations; resonant coupling peaks; simple ray propagation; strong waveguide effect; sub-wavelength metal cavity couplers; terahertz quantum-well photodetectors; Cavity resonators; Couplings; Gallium arsenide; Gratings; Metals; Resonant frequency; Strips; Grating; metal cavity; quantum well photodetector; terahertz;
         
        
        
            Journal_Title : 
Quantum Electronics, IEEE Journal of
         
        
        
        
        
            DOI : 
10.1109/JQE.2012.2190977