DocumentCode
1471325
Title
Silicon molar volume discrepancy: studies of the NRLM crystal
Author
Nakayama, Kan ; Fujimoto, Hiroyuki ; Ishikawa, Tetsuya ; Takeno, Hiroshi
Author_Institution
Nat. Res. Lab. of Metrol., Ibaraki, Japan
Volume
50
Issue
2
fYear
2001
fDate
4/1/2001 12:00:00 AM
Firstpage
601
Lastpage
603
Abstract
A relatively large discrepancy was found in the molar volume of silicon crystals used to determine the Avogadro constant by means of the X-ray and crystal density (XRCD) method. Voids are suspected to cause the difference in the molar volume. Infrared laser scattering tomography, Secco-etching, electron spin resonance, and X-ray topography have been applied to the silicon crystal of the National Research Laboratory of Metrology to detect voids. However, no voids were observed in the crystal
Keywords
X-ray topography; constants; density; elemental semiconductors; etching; optical tomography; silicon; voids (solid); Avogadro constant; NRLM crystal; Secco-etching; Si; X-ray and crystal density method; X-ray topography; XRCD method; electron spin resonance; infrared laser scattering tomography; molar volume discrepancy; voids; Crystals; Infrared detectors; Laboratories; Metrology; Paramagnetic resonance; Silicon; Surfaces; Tomography; X-ray lasers; X-ray scattering;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/19.918201
Filename
918201
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