Title :
Damage-free reactive ion etching of GaAs FET gate recess
Author :
Hilton, K.P. ; Woodward, J. ; Dawsey, J.R. ; Ball, G. ; Gill, S.S.
Author_Institution :
R. Signals & Radar Estab., Malvern, UK
Abstract :
A GaAs reactive ion etching process is described which has good uniformity and causes no significant electrical damage to the underlying substrate. The process is shown to be suitable for forming the gate recess of a GaAs MESFET. FETs fabricated using the process exhibit DC and RF performance similar to equivalent wet etched devices.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor technology; sputter etching; DC performance; GaAs; MESFET; RF performance; electrical damage; gate recess; reactive ion etching process; uniformity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891083
