A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns

Author

Algora, Carlos ; Ortiz, Estíbaliz ; Rey-Stolle, Ignacio ; Díaz, Vicente ; Peña, Rafael ; Andreev, Viacheslav M. ; Khvostikov, Vladimir P. ; Rumyantsev, Valeri D.

Author_Institution

Inst. de Energia Solar, Ciudad Univ., Madrid, Spain

Volume

48

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

840

Lastpage

844

Abstract

A GaAs solar cell without prismatic covers, with the highest efficiency known to the authors in the range of 1000-2000 suns for a single junction, is presented. Low temperature liquid phase epitaxy is used for its growth. In addition to improvements such as the achievement of a good quality material or a low contact resistance, this solar cell exhibits specific enhanced aspects. Among the most noticeable are: (1) an innovative design; (2) a double and gradual emitter layer; (3) a small size: 1 mm², (4) a finger width of the front metal grid of 3 μm; and (5) a tailored ARC deposition based on a nondestructive and accurate AlGaAs window layer characterization. As a consequence, an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns AM1.5D (standard conditions) is achieved thanks mainly to a short-circuit current density at 1000 suns of 26.8 A/cm² (and 53.6 A/cm² at 2000 suns) with a simultaneous series resistance of 3 mΩ·cm²

Keywords

III-V semiconductors; antireflection coatings; contact resistance; current density; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; solar cells; 1 mm; AlGaAs; GaAs; PV cell fabrication; back metallisation; double emitter layer; gradual emitter layer; high quantum efficiency; innovative design; low contact resistance; low temperature LPE; multidimensional optimisation; short-circuit current density; simultaneous series resistance; single junction cell; small size; solar cell; tailored ARC deposition; window layer characterization; Contact resistance; Current density; Electrical resistance measurement; Epitaxial growth; Fabrication; Fingers; Gallium arsenide; Photovoltaic cells; Sun; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.918225

Filename

918225