• DocumentCode
    1471504
  • Title

    Polysilicon TFT technology for active matrix OLED displays

  • Author

    Stewart, Mark ; Howell, Robert S. ; Pires, Leo ; Hatalis, Miltiadis K.

  • Author_Institution
    Lucent Technols., Allentown, PA, USA
  • Volume
    48
  • Issue
    5
  • fYear
    2001
  • fDate
    5/1/2001 12:00:00 AM
  • Firstpage
    845
  • Lastpage
    851
  • Abstract
    The integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing displays of uniform brightness. This work identifies and addresses several process integration issues unique to this type of display which are important in achieving bright and uniform displays. Rapid thermal processing has been incorporated to achieve uniform polysilicon microstructure, along with silicides to reduce parasitic source and drain series resistance. Using these processes, TFT drain current nonuniformity has been reduced below 5% for 90% of the devices. This work also introduces transition metals to produce low resistance contacts to ITO and to eliminate hillock formation in the aluminum metallization. These processes, along with spin on glasses for planarization, have been used to produce functional active matrix arrays for OLED displays. The final array pixel performance is also presented
  • Keywords
    LED displays; brightness; elemental semiconductors; flat panel displays; passivation; rapid thermal annealing; semiconductor device metallisation; silicon; surface treatment; thin film transistors; Al; ITO low resistance contacts; NiSi; Si; active matrix OLED displays; aluminum metallization; array pixel performance; design strategy; drain current nonuniformity; functional active matrix arrays; hillock formation elimination; nickel silicides; passivation; planarization; polysilicon TFT technology; process integration issues; rapid thermal processing; reduced parasitic resistance; silicon island preparation; spin on glass; uniform brightness displays; uniform polysilicon microstructure; Active matrix organic light emitting diodes; Active matrix technology; Brightness; Flat panel displays; Microstructure; Organic light emitting diodes; Rapid thermal processing; Silicides; Thermal resistance; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.918227
  • Filename
    918227