Title :
Optical characteristics of silicon semiconductor bridges under high current density conditions
Author :
Kim, Jongdae ; Roh, Tae Moon ; Cho, Kyoung-Ik ; Jungling, Kenneth C.
Author_Institution :
Micro Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
5/1/2001 12:00:00 AM
Abstract :
The optical emission spectra (180-700 nm) of plasma produced by a semiconductor bridge (SCB) with aluminum or tungsten electrodes have been measured and analyzed. The spatially and temporally resolved emission spectra of the SCB device have provided insights into the dynamic discharge of the bridge. The plasma electron temperature of the SCB device was measured using the comparison of the continuum emission of the bridge with the calculated optical emission spectra for a gray body source. Measured electron temperatures in the plasma produced by the bridges are related to the capacitor discharging voltage. The best estimates indicate that 4100-5500 K was measured for Al-electrode SCB device and 5650-6000 K for W-electrode SCB device
Keywords :
current density; discharges (electric); electric ignition; explosions; plasma production; plasma temperature; semiconductor devices; silicon-on-insulator; time resolved spectra; ultraviolet spectra; visible spectra; 180 to 700 nm; 4100 to 5500 K; 5650 to 6000 K; Al; Joule heating; SOS film; Si-Al2O3; W; aluminium electrode; capacitor discharging voltage; continuum emission; dynamic discharge; electron temperature; explosive initiator; gray body source; heavily doped; high current density conditions; hot plasma; optical emission spectra; plasma temperature; preferential erosion; semiconductor bridge; spatially resolved emission spectra; temporally resolved emission spectra; tungsten electrode; wavelength dependent response; Bridge circuits; Electron optics; Plasma devices; Plasma measurements; Plasma properties; Plasma sources; Plasma temperature; Silicon; Stimulated emission; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on