مرکز منطقه ای اطلاع رساني علوم و فناوري - Comparative Analysis of MIS Capacitance Structures With High-k Dielectrics Under Gamma, <formula formulatype="inline"> <img src="/images/tex/20274.gif" alt="^{16}"> </formula>O and p Radiation

DocumentCode :

1471571

Title :

Comparative Analysis of MIS Capacitance Structures With High-k Dielectrics Under Gamma, $^{16}$ O and p Radiation

Author :

Quinteros, C.P. ; Salomone, L. Sambuco ; Redin, E. ; Rafí, J.M. ; Zabala, M. ; Faigón, A. ; Palumbo, F. ; Campabadal, F.

Author_Institution :

Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) and CNEA, San Martín (1650), Argentina

Volume :

Issue :

fYear :

2012

Firstpage :

767

Lastpage :

772

Abstract :

MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons $^{60}{\\hbox {Co}}$ , 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization.

Keywords :

Capacitance; Capacitance-voltage characteristics; Capacitors; Hafnium oxide; Hysteresis; Radiation effects; High-k gate dielectrics; MOS devices; radiation effects;

fLanguage :

English

Journal_Title :

Nuclear Science, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9499

Type :

jour

DOI :

10.1109/TNS.2012.2187217

Filename :

6170909

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1471571