Title :
Characterization of ultrathin oxynitride (18-21 A) gate dielectrics by NH3 nitridation and N2O RTA treatment
Author :
Pan, Tung Ming ; Lei, Tan Fu ; Wen, Huang Chun ; Chao, Tien Sheng
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
5/1/2001 12:00:00 AM
Abstract :
In this paper, we developed a new method to grow robust ultrathin oxynitride (EOT=18 A) film with effective dielectric constant of 7.15. By NH3-nitridation of Si substrate, grown ultrathin Si3N4 With N2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices
Keywords :
ULSI; dielectric thin films; electron traps; leakage currents; nitridation; permittivity; rapid thermal annealing; tunnelling; 18 to 21 angstrom; Fowler-Nordheim tunneling mechanism; N2O; NH3; RTA treatment; Si-Si3N4; bulk trap density; effective dielectric constant; endurance; leakage current; nitridation; trap generation rate; ultralarge scale integrated devices; ultrathin oxynitride gate dielectrics; Capacitance; Chaos; Dielectric devices; Dielectric films; Leakage current; MOSFET circuits; Silicon; Thermal stresses; Tunneling; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
