Analysis of the DCIV peaks in electrically stressed pMOSFETs

Author

Bin Jie, Bin ; Chim, W.K. ; Li, Ming-Fu ; Lo, K.F.

Author_Institution

Chartered Semicond. Manuf. Pte. Ltd., Singapore

Volume

48

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

913

Lastpage

920

Abstract

This paper presents the effects of Fowler-Nordheim (FN) and hot-carrier (HC) stress in the direct-current current voltage (DCIV) measurements. The effect of interface trapped charge on DCIV curves is reported. Stress-induced oxide charge shifts the DCIV peaks, while stress-induced interface trapped charge causes a spread in the DCIV peaks. It is found that under HC stress, when the absolute value of stress gate voltage changes from low to high, the interface trap spatial location moves from the drain region to the channel region. It is inferred that the generation of oxide charge in the drain region is a two-step process. For short stress times, electrons mainly fill the process-induced neutral oxide traps, while for long stress times, electrons fill the stress created electron traps

Keywords

MOSFET; electron traps; hot carriers; interface states; semiconductor device measurement; semiconductor device reliability; tunnelling; DC I-V peak analysis; Fowler-Nordheim stress; channel region; device reliability; direct-current current voltage measurements; drain region; electrically stressed pMOSFETs; hot-carrier stress; interface trap spatial location; interface trapped charge; process-induced neutral oxide traps; stress created electron traps; stress gate voltage; stress-induced interface trapped charge; stress-induced oxide charge; Charge measurement; Charge pumps; Current measurement; Density measurement; Electron traps; Hot carriers; MOSFETs; Radiative recombination; Stress measurement; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.918239

Filename

918239