Title :
Nonlinear InGaAs-InGaAsP single-quantum-well all-optical switch-theory and experiments
Author :
Gontijo, Ivair ; Neilson, David T. ; Walker, Andy C. ; Kennedy, G.T. ; Sibbett, W.
Author_Institution :
Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
fDate :
12/1/1996 12:00:00 AM
Abstract :
A detailed theory for the operation of a guided wave all-optical switch is presented and compared with experimental results. The switch exploits the two polarization-dependent band-edges of an InGaAs-InGaAsP single-quantum-well embedded in an InP waveguide and the dependence of refractive index on carrier density. This semiconductor all-optical nonlinear dichroic (SAND) device is potentially capable of operating at repetition rates up to ~50 GHz. The model which has been developed agrees well with the experiments and has been used to determine the optimum design and operating conditions for the device. In particular, it predicts that a gain of 23, with 54% modulation depth, should be achievable in realistic experimental conditions
Keywords :
III-V semiconductors; carrier density; dichroism; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical modulation; optical switches; optical waveguides; semiconductor device models; semiconductor quantum wells; InGaAs-InGaAsP; InGaAs-InGaAsP single-quantum-well; InGaAs-InGaAsP single-quantum-well all-optical switch-theory; InP waveguide; SAND; carrier density; guided wave all-optical switch; modulation depth; nonlinear switching theory; operating conditions; optimum design; polarization-dependent band-edges; refractive index; repetition rates; semiconductor all-optical nonlinear dichroic; Fiber lasers; Nonlinear optics; Optical fibers; Optical modulation; Optical pulses; Optical switches; Polarization; Pulse amplifiers; Refractive index; Semiconductor optical amplifiers;
Journal_Title :
Quantum Electronics, IEEE Journal of
