DocumentCode :
1471649
Title :
Analysis of the stochastic error of stationary Monte Carlo device simulations
Author :
Jungemann, Christoph ; Meinerzhagen, Bernd
Author_Institution :
Bremen Univ., Germany
Volume :
48
Issue :
5
fYear :
2001
fDate :
5/1/2001 12:00:00 AM
Firstpage :
985
Lastpage :
992
Abstract :
Without proper analysis of the stochastic error, it is not possible to assess the accuracy or efficiency of Monte Carlo device simulations, and misleading results might be obtained. This is demonstrated for the so-called variance-minimizing estimator for the steady-state terminal currents which turns out to be not more efficient than a standard estimator. Self-consistent (with respect to the electric field) and non self-consistent device simulations are analyzed. In contrast to previously published results both methods have the same efficiency with respect to terminal currents, but in the case of internal distributions, like the particle density, self-consistent simulations are much more efficient. In addition, it is shown that non self-consistency increases the relaxation times of fluctuations by orders of magnitude necessitating extremely long simulation times. The efficiency of statistical enhancement is found to be degraded by strong interparticle correlation due to particle splitting
Keywords :
Monte Carlo methods; doping profiles; electron density; error analysis; semiconductor device models; semiconductor device noise; stochastic processes; doping profile; electron density; fluctuation relaxation times; internal distributions; interparticle correlation; noise; nonself-consistent device simulations; particle density; particle splitting; self-consistent device simulations; simulation times; stationary Monte Carlo device simulations; statistical enhancement; steady-state terminal currents; stochastic error; variance-minimizing estimator; Analytical models; Associate members; Error analysis; Fluctuations; Hot carriers; Monte Carlo methods; Semiconductor device noise; Steady-state; Stochastic processes; Stochastic resonance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.918247
Filename :
918247
Link To Document :
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