Title :
Gate-induced drain leakage current enhanced by plasma charging damage
Author :
Ma, Siguang ; Zhang, Yaohui ; Li, M.-F. ; Weidan Li ; Xie, Joseph ; Sheng, George T T ; Yen, Andrew C. ; Wang, John L F
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
fDate :
5/1/2001 12:00:00 AM
Abstract :
Correlation between gate-induced drain leakage (GIDL) current I GIDL and plasma charging damage is investigated for p-MOSFETs. IGIDL and maximum charge pumping current show the same trend as a function of antenna area ratio (AAR) and cell location. Enhancement of IGIDL is mainly attributed to the increase of Si/SiO2 interface traps generated in the plasma processes and is not related to the small amount of trapped charge in the oxide
Keywords :
MOSFET; interface states; leakage currents; plasma materials processing; sputter etching; 5 nm; GIDL current enhancement; Si-SiO2; Si/SiO2 interface traps; antenna area ratio; cell location; gate-induced drain leakage current; maximum charge pumping current; pMOSFETs; plasma charging damage; plasma processes; Charge pumps; Current measurement; Degradation; Leakage current; MOSFET circuits; Plasma devices; Plasma materials processing; Plasma sources; Stress; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
