Title :
Reliability of thin oxides grown on deuterium implanted silicon substrate
Author :
Misra, D. ; Jarwal, R.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
fDate :
5/1/2001 12:00:00 AM
Abstract :
We have investigated the reliability of gate oxide with deuterium incorporated at the Si/SiO2 interface through low energy ion implantation into the silicon substrate before thin gate oxide growth. Deuterium implantation at a dose of 1×1014/cm2 at 25 keV showed improved breakdown characteristics. Charge-to-breakdown seems to correlate well with the interface state density measured by the conductance method
Keywords :
MOS capacitors; deuterium; dielectric thin films; interface states; ion implantation; semiconductor device breakdown; semiconductor device reliability; semiconductor-insulator boundaries; 25 keV; MOS capacitor; Si-SiO2; Si/SiO2 interface; Si:D; breakdown characteristics; charge-to-breakdown; conductance method; deuterium implanted silicon substrate; gate oxide reliability; interface state density; low energy ion implantation; Annealing; Current measurement; Density measurement; Deuterium; Dielectric substrates; Electric breakdown; Interface states; Ion implantation; Silicon; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
