Title :
Experimental determination of carrier-induced differential loss in 2-section GaInAsP/InP laser-waveguide
Author :
Brosson, P. ; Labourie, C. ; le Gouezigou, L. ; Lievin, J.L. ; Jacquet, Joel ; Leblond, Frederic ; Olivier, Augustin ; Leclerc, D.
Author_Institution :
Lab. de Marcoussis, France
Abstract :
Measurements of threshold current density and external efficiency on broad-area laser-waveguide structure have led to the determination of the optical loss and differential loss d alpha /dN approximately=1.1-2.3 *10-17 cm2 at lambda =1.53 mu m in a lambda g=1.30 mu m GaInAsP layer. This measurement will be useful for the design of tunable lasers.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical loss measurement; optical waveguides; semiconductor junction lasers; 1.53 micron; GaInAsP-InP; broad-area laser-waveguide structure; carrier-induced differential loss; differential loss; external efficiency; optical loss; threshold current density; tunable lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891087
