DocumentCode :
1471755
Title :
Heterojunction and heterodimensional devices for optoelectronics
Author :
Nabet, B. ; Quaranta, F. ; Cola, A.
Volume :
2
Issue :
1
fYear :
2001
fDate :
3/1/2001 12:00:00 AM
Firstpage :
40
Lastpage :
45
Abstract :
This article features a few optical sensory devices with basic properties that are changed by the presence of a two-dimensional electron gas (2DEG). A photodetector based on ohmic contact to the 2DEG is first presented in which variation of the 2DEG concentration and the (transverse) electric field that causes this confinement radically changes the device behavior. Next, the same device architecture is used but two Schottky contacts replace the ohmic ones, resulting, as expected, in a vastly different device behavior
Keywords :
Schottky barriers; metal-semiconductor-metal structures; ohmic contacts; photoconducting devices; photodetectors; semiconductor heterojunctions; two-dimensional electron gas; MSM device; Schottky contact; electric field; heterodimensional device; heterojunction device; ohmic contact; optical sensory device; optoelectronics; photodetector; two-dimensional electron gas; Carrier confinement; Dark current; Detectors; Electrons; HEMTs; Heterojunctions; Noise reduction; Photodetectors; Photonic band gap; Semiconductor device noise;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/6668.918261
Filename :
918261
Link To Document :
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