Title :
Pulse-Programming Instabilities of Unipolar-Type NiOx
Author :
Kim, Deok-Kee ; Suh, Dong-Seok ; Park, Jucheol
Author_Institution :
Samsung Electron. Co., Ltd., Yongin, South Korea
fDate :
6/1/2010 12:00:00 AM
Abstract :
Oscillations in the transient current profiles of resistive switching memory during set and reset pulse programming were observed and explained by the repeated threshold switching (instantaneous set/reset programming) due to the unstably applied voltage on the resistive random access memory cell during switching. Adding a feedback circuit to prevent the observed oscillations as well as limiting the parasitic capacitance are needed for stable unipolar resistive memory switching.
Keywords :
capacitance; circuit feedback; oscillations; random-access storage; switching circuits; feedback circuit; oscillations; parasitic capacitance; pulse-programming instabilities; resistive random access memory cell; threshold switching; unipolar resistive memory switching; $hbox{NiO}_{x}$; pulse programming; resistive random access memory (ReRAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2045873
