DocumentCode :
1472149
Title :
Efficiency Improvement of GaN-Based LEDs With a 
Nanorod Array and a Patterned Sapphire Substrate
Author :
Huang, H.W. ; Huang, J.K. ; Lin, C.H. ; Lee, K.Y. ; Hsu, H.W. ; Yu, C.C. ; Kuo, H.C.
Author_Institution :
Inst. of ElectroOptical Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
31
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
582
Lastpage :
584
Abstract :
The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a patterned sapphire substrate (PSS) and a SiO2 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on transistor-outline-can package, the light output powers of LED with a PSS and LED with a PSS and a SiO2 PQC structure are enhanced by 35% and 48%, compared with the conventional LED. In addition, the higher output power of the LED with a PSS and a SiO2 PQC structure is due to better reflectance on PSS and higher epitaxial quality on an n-GaN using a SiO2 12-fold PQC structure pattern. These results provide promising potential to increase output powers of commercial light-emitting devices.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; nanolithography; wide band gap semiconductors; GaN; LED; SiO2; epitaxial quality; light extraction; nanoimprint lithography; nanorod array; patterned sapphire substrate; photonic quasicrystal structure; transistor-outline-can package; Gallium nitride (GaN); light-emitting diodes (LEDs); nanoimprint lithography (NIL); patterned sapphire substrate (PSS);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2045472
Filename :
5447653
Link To Document :
