A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

Author

Lam, Kai-Tak ; Seah, Dawei ; Chin, Sai-Kong ; Kumar, S. Bala ; Samudra, G. ; Yeo, Yee-Chia ; Liang, Gengchiau

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

Volume

31

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

555

Lastpage

557

Abstract

The device physics and performance of heterojunction (HJ) graphene-nanoribbon (GNR) tunneling field-effect transistors (TFETs) with different designs are investigated in this letter. Due to the width-dependent energy bandgap (E_G), a single GNR with spatially dependent width naturally yields an HJ structure to improve the device performance of a GNR TFET. By adding a small-E_G region in the channel near the source and a large-E_G region in the middle of the channel, the ON- and OFF-state currents (I_ON and I_OFF, respectively) can be tuned. Last, we have studied the effect of channel length scaling on an HJ GNR TFET, and it has been observed that an I_ON/I_OFF ratio of four orders of magnitude can be achieved with a channel length of 10 nm and a drain bias of 0.6 V.

Keywords

field effect transistors; graphene; nanoelectronics; channel length scaling; graphene-nanoribbon tunneling FET; heterojunction channel; width-dependent energy bandgap; Graphene; heterojunction (HJ); tunneling transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2045339

Filename

5447654