Title :
2W reliable operation of λ=735 nm GaAsP/AlGaAs laser diodes
Author :
Sumpf, B. ; Beister, G. ; Erbert, G. ; Fricke, J. ; Knauer, A. ; Pittroff, W. ; Ressel, P. ; Sebastian, J. ; Wenzel, H. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik., Berlin, Germany
fDate :
3/15/2001 12:00:00 AM
Abstract :
Reliable operation of 735 nm laser diodes based on a tensile-strained GaAsP quantum well embedded in an AlGaAs large optical cavity structure is reported. The 100 μm stripe width laser diodes were aged at a record high output power of 2W for 2000 hours. The degradation rates were 3.6×10-5 h-1
Keywords :
III-V semiconductors; ageing; aluminium compounds; gallium arsenide; laser cavity resonators; laser reliability; quantum well lasers; semiconductor device reliability; 100 mum; 2 W; 2000 hour; 2W reliable operation; 735 nm; AlGaAs large optical cavity structure; GaAsP-AlGaAs; GaAsP/AlGaAs laser diodes; ageing; degradation rates; output power; stripe width; tensile-strained embedded GaAsP quantum well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010266
