Title :
OC-48 capable InGaAsN vertical cavity lasers
Author :
Jackson, A.W. ; Naone, R.L. ; Dalberth, M.J. ; Smith, J.M. ; Malone, K.J. ; Kisker, D.W. ; Klem, J.F. ; Choquette, K.D. ; Serkland, D.K. ; Geib, K.M.
Author_Institution :
Cielo Commun. Inc., Broomfield, CA, USA
fDate :
3/15/2001 12:00:00 AM
Abstract :
A selectively oxidised InGaAsN/GaAs three quantum well vertical cavity laser (VCSEL) demonstrated continuous wave (CW) lasing with a single-mode output power of 0.749 mW at 1266 nm. This is the first reported InGaAsN VCSEL capable of meeting the power and wavelength requirements for both OC-48 SR and OC-48 IR-1 compliant links. The VCSEL uses two low absorption n-type GaAs/AlGaAs distributed Brag reflectors and a tunnel junction to achieve current injection into the active region. A multimode version of the VCSEL had a output power of 1.43 mW at 1.26 μm. CW lasing continued up to temperatures as high as 107°C. The VCSEL material was grown by solid source molecular beam epitaxy with an RF nitrogen plasma source
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser modes; molecular beam epitaxial growth; optical fabrication; optical fibre networks; optical transmitters; quantum well lasers; surface emitting lasers; 0.749 mW; 1.26 mum; 1.43 mW; 107 C; 1266 nm; CW lasing; GaAs-AlGaAs; GaAs/AlGaAs; InGaAsN; InGaAsN vertical cavity lasers; InGaAsN-GaAs; InGaAsN/GaAs; OC-48 IR-1 compliant links; OC-48 SR compliant links; RF N2 plasma source; VCSEL; VCSEL material; active region; continuous wave lasing; current injection; low absorption n-type distributed Bragg reflectors; multimode version; output power; power requirements; quantum well vertical cavity laser; single-mode output power; solid source molecular beam epitaxy; temperatures; tunnel junction; vertical cavity lasers; wavelength requirements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010232
