Title :
Tunnel barrier properties of stressed ferromagnetic tunnel junctions
Author :
Das, Joydeep ; Degraeve, Robin ; Boeve, H. ; Lagae, Liesbet ; Groeseneken, Guido ; Borghs, G. ; de Broek, J.
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
fDate :
3/15/2001 12:00:00 AM
Abstract :
The oxide breakdown properties of ultra-thin (-1 nm) naturally oxidised Al/sub 2/O/sub 3/ tunnel barriers in magnetic tunnel junctions were studied using ramped and constant stress experiments. During stress measurements at 1.35 V, a fast breakdown of the junction was observed. The time-to-breakdown is evaluated using Weibull statistics, as commonly utilised in SiO/sub 2/ reliability studies.
Keywords :
Weibull distribution; alumina; ferromagnetic materials; magnetic breakdown; magnetic storage; magnetoresistive devices; random-access storage; stress measurement; tunnelling; 1 nm; 1.35 V; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ tunnel barriers; SiO/sub 2/ reliability studies; Weibull statistics; constant stress experiment; magnetic tunnel junctions; naturally oxidised Al/sub 2/O/sub 3/ tunnel barriers; oxide breakdown properties; ramped stress experiments; stress measurements; stressed ferromagnetic tunnel junctions; time-to-breakdown; tunnel barrier properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010262
