Title :
High-power 1.5 mu m all-MOVPE buried heterostructure graded index separate confinement multiple quantum well lasers
Author :
Cooper, Diana Marina ; Aylett, Matthew ; Elton, D.J. ; Harlow, M. ; Murrell, D.L.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
Abstract :
A maximum total CW output power of 190 mW has been obtained at 1.55 mu m using a buried heterostructure graded index separate confinement multiple quantum well laser grown entirely by metalorganic vapour-phase epitaxy.
Keywords :
semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.55 micron; 190 mW; buried heterostructure graded index separate confinement multiple quantum well lasers; maximum total CW output power; metalorganic vapour-phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891096
