DocumentCode :
1472439
Title :
Broadband semiconductor saturable absorber mirror at 1.55 μm using Burstein-Moss shifted Ga0.46In0.53-InP distributed Bragg reflector
Author :
Xiang, N. ; Okhotnikov, O. ; Vainionpää, A. ; Guina, M. ; Pessa, M.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
Volume :
37
Issue :
6
fYear :
2001
fDate :
3/15/2001 12:00:00 AM
Firstpage :
374
Lastpage :
375
Abstract :
The authors report on the first broadband semiconductor saturable absorber mirror (SESAM) that consists of a Burstein-Moss blue shifted Ga 0.47In0.53As-InP distributed Bragg reflector operating at the wavelengths centres around 1.55 μm. This device is applied to the passive modelocking of an erbium-doped fibre laser
Keywords :
III-V semiconductors; fibre lasers; gallium arsenide; indium compounds; laser mirrors; laser mode locking; optical communication equipment; optical saturable absorption; 1.55 mum; Burstein-Moss blue shifted; Burstein-Moss shifted; Er-doped fibre laser mode locking; Ga0.46ln0.53As-InP distributed Bragg reflector; Ga0.47In0.53As-InP; broadband semiconductor saturable absorber mirror; passive modelocking;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010275
Filename :
918352
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1472439
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