Title :
5.2% efficiency InAlGaP microcavity LEDs at 640 nm on Ge substrates
Author :
Modak, P. ; D´Hondt, M. ; Moerman, I. ; Van Daele, P. ; Mijlemans, P. ; Demeester, P.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
fDate :
3/15/2001 12:00:00 AM
Abstract :
InAlGaP microcavity LEDs on Ge substrates emitting at 640 nm with compressively strained MQW active layers have been fabricated. The external quantum efficiency for a nonencapsulated MCLED was 5.2% at 4 mA and the device emitted 1.9 mW at 20 mA and nearly 8 mW optical output power at an injection current of 100 mA
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; integrated optics; light emitting diodes; micro-optics; micromechanical resonators; 1.9 mW; 100 mA; 20 mA; 4 mA; 5.2 percent; 640 nm; 8 mW; Ge; Ge substrates; InAlGaP; InAlGaP microcavity LEDs; compressively strained MQW active layers; external quantum efficiency; injection current; mW optical output power; nonencapsulated MCLED;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010236
