Title :
A triple-well resonant tunneling diode for multiple-valued logic application
Author :
Tanoue, T. ; Mizuta, H. ; Takahashi, S.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A resonant tunneling diode with four potential barriers and three quantum wells was fabricated and applied to multiple-valued logic. The diode exhibited significant double negative resistance characteristics and operated as a triple stable device with a single voltage between 180 and 230 K.<>
Keywords :
logic devices; many-valued logics; negative resistance; tunnel diodes; double negative resistance characteristics; multiple-valued logic application; potential barriers; quantum wells; triple stable device; triple-well resonant tunneling diode; Circuits; Diodes; Electrons; Logic devices; Logic functions; Probability; Quantum mechanics; Resonance; Resonant tunneling devices; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
