• DocumentCode
    1472471
  • Title

    A triple-well resonant tunneling diode for multiple-valued logic application

  • Author

    Tanoue, T. ; Mizuta, H. ; Takahashi, S.

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    9
  • Issue
    8
  • fYear
    1988
  • Firstpage
    365
  • Lastpage
    367
  • Abstract
    A resonant tunneling diode with four potential barriers and three quantum wells was fabricated and applied to multiple-valued logic. The diode exhibited significant double negative resistance characteristics and operated as a triple stable device with a single voltage between 180 and 230 K.<>
  • Keywords
    logic devices; many-valued logics; negative resistance; tunnel diodes; double negative resistance characteristics; multiple-valued logic application; potential barriers; quantum wells; triple stable device; triple-well resonant tunneling diode; Circuits; Diodes; Electrons; Logic devices; Logic functions; Probability; Quantum mechanics; Resonance; Resonant tunneling devices; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.745
  • Filename
    745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1472471