• DocumentCode
    1472494
  • Title

    a-Si:H TFTs using low-temperature CVD of Si3H8

  • Author

    Breddels, P.A. ; Kanoh, H. ; Sugiura, O. ; Matsumura, M.

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
  • Volume
    25
  • Issue
    24
  • fYear
    1989
  • Firstpage
    1637
  • Lastpage
    1638
  • Abstract
    a-Si:H layers have been deposited by chemical vapour deposition (CVD) at 350 degrees C using Si3H8 as the source gas. Inverted staggered gate thin-film transistors (TFTs) were fabricated with plasma-CVD-grown SiNx as the gate insulator. Electron field-effect mobilities of 0.45 cm2/Vs were obtained and the on/off ratio in the drain current was 106.
  • Keywords
    CVD coatings; amorphous semiconductors; hydrogen; silicon; silicon compounds; thin film transistors; 350 degC; Si 3H 8; SiN x-Si:H; drain current; gate insulator; inverted staggered gate; low-temperature CVD; on/off ratio; source gas; thin-film transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891097
  • Filename
    91836
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1472494