Title :
Design of 50–75 GHz V-band low power and high gain down-conversion mixer
Author :
Suriya, K. ; Durga, G.
Author_Institution :
ECE Dept., SSN Coll. of Eng., Chennai, India
Abstract :
This paper presents the design of V-band low power down-conversion mixer operating in weak inversion biasing region using 90-nm CMOS technology. The mixer exhibits a double-balanced Gilbert cell structure in source-driven topology with RF signal applied at the gate and local oscillator (LO) signal at the source. It achieves high conversion gain of 7.297 dB at RF signal of 60 GHz at standard supply voltage of 1.2 V. Other performance parameters measured are LO-to-RF port isolation as more than 40 dB, the third-order input intercept point (IIP3) as -1.692 dBm, OP1dB as -7.382 dBm and DC power consumption of 548 μW at LO power of -6 dBm indicates that this mixer is suitable for low power millimeter-wave (MMW) radio applications. The mixer is designed and simulated using Agilent´s Advanced Design System (ADS).
Keywords :
CMOS integrated circuits; low-power electronics; millimetre wave integrated circuits; millimetre wave mixers; ADS; Agilent advanced design system; CMOS technology; IIP3; LO signal; LO-to-RF port isolation; MMW radio applications; RF signal; V-band low power design; double-balanced Gilbert cell structure; frequency 50 GHz to 75 GHz; gain 7.297 dB; high gain down-conversion mixer; local oscillator signal; millimeter-wave radio applications; power 548 muW; size 90 nm; source-driven topology; third-order input intercept point; voltage 1.2 V; weak inversion biasing region; CMOS integrated circuits; CMOS technology; Mixers; RF signals; Radio frequency; Transistors; CMOS; V-band; down-conversion; millimeter-wave (MMW); source-driven; weak inversion;
Conference_Titel :
Communications and Signal Processing (ICCSP), 2014 International Conference on
Conference_Location :
Melmaruvathur
Print_ISBN :
978-1-4799-3357-0
DOI :
10.1109/ICCSP.2014.6950123