Title :
Sacrificial Si and SiO2 layers as surface preparation technique for SiC
Author :
Kestle, A. ; Koh, A. ; Wright, C. ; Wilks, S.P. ; Mawby, P.A. ; Bowen, W.R.
Author_Institution :
Dept. of Electr. Eng., Univ. of Wales, Swansea, UK
fDate :
3/15/2001 12:00:00 AM
Abstract :
The use of sacrificial layers of Si and SiO2 as a surface preparation method for SiC is reported. The chemical nature and morphology of the surfaces were assessed using X-ray photoelectron spectroscopy and atomic force microcopy, respectively. Results show flat well-ordered surfaces far superior to those achieved by conventional cleanroom processing techniques
Keywords :
X-ray photoelectron spectra; atomic force microscopy; silicon compounds; surface structure; surface treatment; wide band gap semiconductors; Si sacrificial layers; SiC; SiC-Si; SiC-SiO2; SiO2 sacrificial layers; X-ray photoelectron spectroscopy; atomic force microcopy; flat well-ordered surfaces; surface chemical nature; surface morphology; surface preparation technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010233
