• DocumentCode
    1472598
  • Title

    Sacrificial Si and SiO2 layers as surface preparation technique for SiC

  • Author

    Kestle, A. ; Koh, A. ; Wright, C. ; Wilks, S.P. ; Mawby, P.A. ; Bowen, W.R.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Wales, Swansea, UK
  • Volume
    37
  • Issue
    6
  • fYear
    2001
  • fDate
    3/15/2001 12:00:00 AM
  • Firstpage
    395
  • Lastpage
    396
  • Abstract
    The use of sacrificial layers of Si and SiO2 as a surface preparation method for SiC is reported. The chemical nature and morphology of the surfaces were assessed using X-ray photoelectron spectroscopy and atomic force microcopy, respectively. Results show flat well-ordered surfaces far superior to those achieved by conventional cleanroom processing techniques
  • Keywords
    X-ray photoelectron spectra; atomic force microscopy; silicon compounds; surface structure; surface treatment; wide band gap semiconductors; Si sacrificial layers; SiC; SiC-Si; SiC-SiO2; SiO2 sacrificial layers; X-ray photoelectron spectroscopy; atomic force microcopy; flat well-ordered surfaces; surface chemical nature; surface morphology; surface preparation technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010233
  • Filename
    918373
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1472598