Using IGBT in Quench Protection of a 2 MJ SMES Magnet

Author

Lei, Yuanzhong ; Chen, Shunzhong ; Li, Xiaoqi ; Dai, Yinming ; Zhao, Baozhi ; Song, Shousen ; Cheng, Junsheng ; Wang, Qiuliang

Author_Institution

Inst. of Electr. Eng., Chinese Acad. of Sci., Beijing, China

Volume

20

Issue

3

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

2083

Lastpage

2086

Abstract

In order to increase energy dumping speed, IGBT (insulated gate bipolar transistor) is used in quench protection of a 2 MJ superconducting magnet. 88 resistors, each connects in series with an IGBT, are connected in series-parallel connection to form a controllable varistor. On/off of the IGBTs are controlled by two single chip processors. Energy dumping with nearly constant magnet terminal voltage is realized in training quenches of the magnet. The necessary breaking capacity of the circuit breaker is also lowered. Details of quench protection electric circuit design and experimental results are presented.

Keywords

circuit breakers; insulated gate bipolar transistors; superconducting magnet energy storage; varistors; IGBT; MJ superconducting magnet; SMES magnets; circuit breaker; controllable varistor; energy dumping; insulated gate bipolar transistor; quench protection; DC circuit breaker; IGBT; quench protection; superconducting magnet;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2010.2044499

Filename

5447753