Title :
Use of implant isolation for fabrication of vertical cavity surface-emitting laser diodes
Author :
Tai, K. ; Wang, K.W. ; Chu, S.N.G. ; Cho, Andrew Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The authors report the first successful use of implant isolation by singly charged oxygen to fabricate MBE-grown GaAs-AlGaAs vertical cavity surface-emitting lasers (VCSELs). Almost identical room-temperature pulsed thresholds of 26 mA on 15 mu m diameter devices with 0.25 mu m GaAs active thicknesses were obtained using implant isolation against etched mesa isolation. The planar nature of implant isolation greatly simplifies processing to allow more sophisticated use of VCSELs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; ion implantation; laser cavity resonators; molecular beam epitaxial growth; optical workshop techniques; semiconductor junction lasers; 0.25 micron; 15 micron; 26 mA; GaAs active thicknesses; GaAs-AlGaAs; MBE-grown; fabrication; implant isolation; semiconductor lasers; singly charged O implant; surface-emitting laser diodes; vertical cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891102
