DocumentCode :
1472927
Title :
Switching Characteristics of 
RRAM Devices for Digital and Analog Nonvolatile Memory Applications
Author :
Long, Branden ; Li, Yibo ; Jha, Rashmi
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA
Volume :
33
Issue :
5
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
706
Lastpage :
708
Abstract :
We report the switching characteristics of RRAM devices consisting of Ru/HfO2/TiO2-x/Ru stacks with and without an external access device. In addition to bistable switching, we also achieved an analog reconfiguration of resistance by controlling the compliance current or the reset voltage to achieve a low-resistance state (LRS) or a high-resistance state (HRS), respectively. All intermediate states were nonvolatile in nature. The transport studies using temperature-dependent I-V measurement indicated the mechanism of conduction to be ionic in LRS and Frenkel-Poole in both HRS and virgin resistance state of a device.
Keywords :
Poole-Frenkel effect; hafnium compounds; random-access storage; ruthenium compounds; titanium compounds; Frenkel-Poole model; HRS; LRS; RRAM device; Ru-HfO2-TiO2-x-Ru; analog nonvolatile memory; bistable switching; compliance current; digital nonvolatile memory; high-resistance state; low-resistance state; reset voltage; temperature-dependent I-V measurement; Hafnium compounds; Resistance; Switches; Temperature measurement; Testing; Nonvolatile memories; resistive random access memory (RRAM); transition metal oxide (TMO);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2188775
Filename :
6171826
Link To Document :
