• DocumentCode
    1472927
  • Title

    Switching Characteristics of \\hbox {Ru/HfO}_{2} \\hbox {/TiO}_{2-x}\\hbox {/Ru} RRAM Devices for Digital and Analog Nonvolatile Memory Applications

  • Author

    Long, Branden ; Li, Yibo ; Jha, Rashmi

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA
  • Volume
    33
  • Issue
    5
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    706
  • Lastpage
    708
  • Abstract
    We report the switching characteristics of RRAM devices consisting of Ru/HfO2/TiO2-x/Ru stacks with and without an external access device. In addition to bistable switching, we also achieved an analog reconfiguration of resistance by controlling the compliance current or the reset voltage to achieve a low-resistance state (LRS) or a high-resistance state (HRS), respectively. All intermediate states were nonvolatile in nature. The transport studies using temperature-dependent I-V measurement indicated the mechanism of conduction to be ionic in LRS and Frenkel-Poole in both HRS and virgin resistance state of a device.
  • Keywords
    Poole-Frenkel effect; hafnium compounds; random-access storage; ruthenium compounds; titanium compounds; Frenkel-Poole model; HRS; LRS; RRAM device; Ru-HfO2-TiO2-x-Ru; analog nonvolatile memory; bistable switching; compliance current; digital nonvolatile memory; high-resistance state; low-resistance state; reset voltage; temperature-dependent I-V measurement; Hafnium compounds; Resistance; Switches; Temperature measurement; Testing; Nonvolatile memories; resistive random access memory (RRAM); transition metal oxide (TMO);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2188775
  • Filename
    6171826
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1472927