DocumentCode
1472952
Title
New lambda /4 phase-shift method by conversion of refractive index difference and application to 1.5 mu m GaInAsP/InP DFB laser
Author
Shim, J.I. ; Lee, Kang Seol ; Arai, Shigehisa ; Suematsu, Yasuharu ; Komori, Kenji
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Volume
25
Issue
24
fYear
1989
Firstpage
1654
Lastpage
1656
Abstract
A new method to introduce a phase shift equivalent pi /2 by inversion of the refractive index difference, which can be carried out easily by conventional photolithography, is proposed and applied to a 1.5 mu m GaInAsP/InP DFB laser. The lambda /4-shifted effect was confirmed by observing the lasing spectrum of an antireflection-coated DFB laser below threshold under CW operation.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical waveguides; optical workshop techniques; refractive index; semiconductor junction lasers; 1.5 micron; CW operation; DFB laser; antireflection coated laser; fabrication method; lambda /4-shifted effect; lasing spectrum; phase-shift method; photolithography; pi /2 phase shift; refractive index difference; semiconductor lasers; single mode operation; waveguide structure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19891109
Filename
91848
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