• DocumentCode
    1472977
  • Title

    Periodic flux interruption and sustained two-dimensional growth for molecular beam epitaxy

  • Author

    Lee, Charlotte P. ; Chang, K.H. ; Liu, D.G. ; Wu, J.S.

  • Author_Institution
    Inst. of Electron., Nat. Chiao Tung Univ., Hsin Chu, Taiwan
  • Volume
    25
  • Issue
    24
  • fYear
    1989
  • Firstpage
    1659
  • Lastpage
    1660
  • Abstract
    Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.
  • Keywords
    III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor growth; Ga flux; GaAs; III-V semiconductors; MBE growth; RHEED intensity oscillation; molecular beam epitaxy; periodic flux interruption; sustained two-dimensional growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891112
  • Filename
    91851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1472977