Title :
Periodic flux interruption and sustained two-dimensional growth for molecular beam epitaxy
Author :
Lee, Charlotte P. ; Chang, K.H. ; Liu, D.G. ; Wu, J.S.
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsin Chu, Taiwan
Abstract :
Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor growth; Ga flux; GaAs; III-V semiconductors; MBE growth; RHEED intensity oscillation; molecular beam epitaxy; periodic flux interruption; sustained two-dimensional growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891112
