Title :
Sub-1-volt Piezoelectric Nanoelectromechanical Relays With Millivolt Switching Capability
Author :
Zaghloul, Usama ; Piazza, Gianluca
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
The design, fabrication, and characterization of the first piezoelectric nanoelectromechanical relays with sub-1-volt actuation (520 mV) are presented. The low actuation voltage is enabled by employing ultrathin piezoelectric aluminum nitride films (10 nm) with high c-axis orientation and controlled residual stress in a stress-compensating geometry. Two different actuation methods based on optimized four-layer unimorph actuators are used to synthesize normally closed relays with high mechanical restoring forces. The first experimental demonstration of few millivolts switching (10 mV) using the realized relays is also presented. The relays exhibit a very low energy dissipation per switching cycle (23 aJ), an extremely small subthreshold slope (0.013 mV/decade), and a low ON-state resistance (2.3 kQ).
Keywords :
III-V semiconductors; aluminium compounds; internal stresses; nanoelectromechanical devices; nanofabrication; piezoelectric actuators; relays; thin film devices; wide band gap semiconductors; AlN; controlled residual stress; energy 23 aJ; energy dissipation; four-layer unimorph actuator; high c-axis orientation; low actuation voltage; mechanical restoring force; millivolt switching capability; piezoelectric nanoelectromechanical relay; resistance 2.3 kohm; size 10 nm; stress-compensating geometry; ultrathin piezoelectric aluminum nitride film; voltage 1 V; voltage 10 mV; voltage 520 mV; Actuators; III-V semiconductor materials; Logic gates; Nanoelectromechanical systems; Relays; Stress; Switches; Aluminum nitride (AlN); millivolt switching; nanoelectromechanical systems (NEMS); piezoelectric; relay; relay.;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2318049