• DocumentCode
    1473057
  • Title

    Some aspects of Gunn effect oscillators

  • Author

    Robson, P.N. ; Mahrous, S.M.

  • Volume
    30
  • Issue
    6
  • fYear
    1965
  • fDate
    12/1/1965 12:00:00 AM
  • Firstpage
    345
  • Lastpage
    352
  • Abstract
    The general view is that the mechanism responsible for the Gunn effect must be similar to that proposed independently by Ridley and Watkins and by Hilsum several years ago. This theory is described and the experiments that have been reported to substantiate it indirectly are reviewed briefly. A tentative theory to explain the wide tuning range observed when Gunn specimens are placed in a suitable cavity resonator (in some cases almost one octave) is advanced. Some experimental results, giving limited confirmation of the theory are presented.
  • Keywords
    Gunn effect; cavity resonators; semiconductor devices; semiconductors; tuning;
  • fLanguage
    English
  • Journal_Title
    Radio and Electronic Engineer
  • Publisher
    iet
  • ISSN
    0033-7722
  • Type

    jour

  • DOI
    10.1049/ree.1965.0112
  • Filename
    5266848