DocumentCode
1473057
Title
Some aspects of Gunn effect oscillators
Author
Robson, P.N. ; Mahrous, S.M.
Volume
30
Issue
6
fYear
1965
fDate
12/1/1965 12:00:00 AM
Firstpage
345
Lastpage
352
Abstract
The general view is that the mechanism responsible for the Gunn effect must be similar to that proposed independently by Ridley and Watkins and by Hilsum several years ago. This theory is described and the experiments that have been reported to substantiate it indirectly are reviewed briefly. A tentative theory to explain the wide tuning range observed when Gunn specimens are placed in a suitable cavity resonator (in some cases almost one octave) is advanced. Some experimental results, giving limited confirmation of the theory are presented.
Keywords
Gunn effect; cavity resonators; semiconductor devices; semiconductors; tuning;
fLanguage
English
Journal_Title
Radio and Electronic Engineer
Publisher
iet
ISSN
0033-7722
Type
jour
DOI
10.1049/ree.1965.0112
Filename
5266848
Link To Document