1.1 kV 4H-SiC power UMOSFETs

Author

Agarwal, A.K. ; Casady, J.B. ; Rowland, L.B. ; Valek, W.F. ; White, M.H. ; Brandt, C.D.

Author_Institution

Northrop Grumman Sci. & Technol. Center, Pittsburgh, PA, USA

Volume

18

Issue

12

fYear

1997

Firstpage

586

Lastpage

588

Abstract

Silicon Carbide (4H-SiC), power UMOSFETs were fabricated and characterized from room temperature to 200/spl deg/C. The devices had a 12-μm thick lightly doped n-type drift layer, and a nominal channel length of 4 μm. When tested under Fluorinert/sup TM/ at room temperature, blocking voltages ranged from 1.0 kV to 1.2 kV. Effective channel mobility ranged from 1.5 cm²/V.s at room temperature with a gate bias of 32 V (3.5 MV/cm) up to 7 cm²/V.s at 100/spl deg/C with an applied gate bias of 26 V (2.9 MV/cm). Specific on-resistance (R/sub on,sp/) was calculated to be as low as 74 m/spl Omega/.cm² at 100/spl deg/C under the same gate bias.

Keywords

electron mobility; power MOSFET; semiconductor device testing; silicon compounds; wide band gap semiconductors; 1 to 1.2 kV; 12 mum; 25 to 200 C; 26 V; 32 V; 4 mum; 4H-SiC power UMOSFET; Fluorinert; I-V characteristics; SiC; applied gate bias; blocking voltage; channel length; effective channel mobility; lightly doped n-type drift layer; specific on-resistance; transfer characteristics; Insulated gate bipolar transistors; MOSFET circuits; Oxidation; Power MOSFET; Schottky diodes; Silicon carbide; Temperature distribution; Testing; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.644079

Filename

644079