• DocumentCode
    1473359
  • Title

    Effect of Carrier Transport in Oxides Surrounding Active Devices on SEU in 45 nm SOI SRAM

  • Author

    Turowski, Marek ; Raman, Ashok ; Alles, Michael L. ; Ball, Dennis ; King, Michael P. ; Reed, Robert A. ; Schrimpf, Ron D.

  • Author_Institution
    CFD Research Corporation (CFDRC), Huntsville, Alabama, USA
  • Volume
    59
  • Issue
    4
  • fYear
    2012
  • Firstpage
    728
  • Lastpage
    734
  • Abstract
    Three-dimensional NanoTCAD simulations of a 45 nm SOI SRAM cell indicate that the contributions of charge generation and transport in the surrounding oxides have a potentially meaningful effect on the SEU response in nanotechnologies.
  • Keywords
    Computational modeling; MOS devices; Random access memory; Silicon on insulator technology; Single event upset; Three dimensional displays; 3D; ${rm SiO}_{2}$ carrier transport; TCAD; mixed-mode simulation; modeling; radiation response; silicon-on-Insulator (SOI); single-event upset (SEU);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2183616
  • Filename
    6171892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1473359