Title :
Effect of Carrier Transport in Oxides Surrounding Active Devices on SEU in 45 nm SOI SRAM
Author :
Turowski, Marek ; Raman, Ashok ; Alles, Michael L. ; Ball, Dennis ; King, Michael P. ; Reed, Robert A. ; Schrimpf, Ron D.
Author_Institution :
CFD Research Corporation (CFDRC), Huntsville, Alabama, USA
Abstract :
Three-dimensional NanoTCAD simulations of a 45 nm SOI SRAM cell indicate that the contributions of charge generation and transport in the surrounding oxides have a potentially meaningful effect on the SEU response in nanotechnologies.
Keywords :
Computational modeling; MOS devices; Random access memory; Silicon on insulator technology; Single event upset; Three dimensional displays; 3D; ${rm SiO}_{2}$ carrier transport; TCAD; mixed-mode simulation; modeling; radiation response; silicon-on-Insulator (SOI); single-event upset (SEU);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2183616
