Title :
Partially doped GaAs single-quantum-well FET
Author :
Ren, Fengyuan ; Tu, C.W. ; Kopf, R.F. ; Wu, C.S. ; Chandra, Aniruddha ; Pearton, S.J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Reports on 1 mu m gate length n+ AlGaAs/partially doped GaAs/n+ AlGaAs single-quantum-well (PDSQW) FETs with a high extrinsic peak transconductance of 300 mS/mm. An acceptably high transconductance is maintained over 2.8 V gate-voltage swing. The FETs demonstrate a sharp pinch-off around Vg=-2 V, and a full channel current of 820 mA/mm was observed at room temperature. The PDSQW structures exhibit a two-dimensional electron-gas (2DEG) sheet charge density as high as 3.4*1012 cm-2 with mobility of 17000 cm2/Vs at 77 K. The PDSQW structure combines the advantages of both the conventional single-quantum-well (SQW) structure (high mobility and good carrier confinement) and the doped-channel structure (high carrier density).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor doping; semiconductor quantum wells; 1 micron; 2 V; 2.8 V; 300 mS/mm; 77 K; AlGaAs-GaAs-AlGaAs; FET; HEMT; PDSQW structures; SDHT; carrier confinement; channel current; doped-channel structure; extrinsic peak transconductance; gate-voltage swing; high carrier density; mobility; partially-doped single quantum well; room temperature; semiconductors; sharp pinch-off; sheet charge density; two-dimensional electron-gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891123
