DocumentCode :
1473573
Title :
Crack formation mechanism in laser-welded Au-coated Invar materials for semiconductor laser packaging
Author :
Kuang, Jao-Hwa ; Sheen, Maw-Tyan ; Wang, Szu-Chun ; Chen, Cheng-Huang ; Cheng, Wood-Hi
Author_Institution :
Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Volume :
22
Issue :
1
fYear :
1999
fDate :
2/1/1999 12:00:00 AM
Firstpage :
94
Lastpage :
100
Abstract :
Crack formation mechanism in laser-welded Au-coated Invar materials for semiconductor laser packaging is investigated experimentally and numerically. Experimental results obtained from metallography, scanning electron microscope (SEM), SEM mapping, and energy dispersive spectrometer (EDS) line profile show that high concentration of Au composition accumulate near the crack region. The cause of Au accumulation may come from the segregation of Au along the track region. A finite-element method (FEM) is performed on the calculation of thermal stresses during spot-welding for Au-coated Invar materials. Numerical results show that the high tensile stresses of the Au segregation layer generated by rapid solidification shrinkage is the possible cause for crack formation. Both experimental and numerical results suggest that the crack formation mechanism in laser-welded Au-coated optoelectronic materials is directly related to the combined effects of the Au segregation and high tensile stresses induced by the strain shrinkage during the final stage of solidification
Keywords :
Invar; cracks; finite element analysis; gold; laser beam welding; rapid solidification; scanning electron microscopy; segregation; semiconductor device packaging; semiconductor lasers; thermal stresses; Au segregation; Au-coated Invar material; FeMnNi-Au; SEM mapping; crack formation; energy dispersive spectrometry line profile; finite element method; laser welding; metallography; optoelectronic material; rapid solidification; scanning electron microscopy; semiconductor laser packaging; spot welding; strain shrinkage; tensile stress; thermal stress; Dispersion; Gold; Numerical analysis; Optical materials; Scanning electron microscopy; Semiconductor device packaging; Semiconductor lasers; Semiconductor materials; Tensile stress; Thermal stresses;
fLanguage :
English
Journal_Title :
Advanced Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-3323
Type :
jour
DOI :
10.1109/6040.746548
Filename :
746548
Link To Document :
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