• DocumentCode
    1473592
  • Title

    Direct energy gap of Sb2Te3 synthesised by solid-state microwave plasma

  • Author

    Suriwong, T. ; Thongtem, T. ; Thongtem, S.

  • Author_Institution
    Dept. of Phys. & Mater. Sci., Chiang Mai Univ., Chiang Mai, Thailand
  • Volume
    6
  • Issue
    3
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    170
  • Lastpage
    173
  • Abstract
    The usefulness of microwave heating and microwave generation of plasma for solid-state synthesis of Sb2Te3 crystals is reported. Lengths of time and molar ratios of Sb:Te were varied to achieve pure products heated by a 900 W microwave-irradiated plasma. In the present research, the products were Sb2Te3 with a rhombohedral crystal system using 2:2, 2:1.75 and 2:1.5 molar ratios of Sb:Te, and lengths of time of 10 and 20 min. Their different crystallographic planes were also detected, including four Raman shifts at 93.9, 102.6, 139.2 and 263.7 cm-1, and direct energy gaps (Eg) in a range of 0.340-0.515-eV.
  • Keywords
    Raman spectra; antimony compounds; crystal growth; crystal structure; energy gap; plasma materials processing; semiconductor growth; semiconductor materials; Raman shifts; Sb2Te3; direct energy gap; microwave plasma generation; microwave plasma heating; microwave-irradiated plasma; power 900 W; rhombohedral crystal system; solid-state microwave plasma; time 10 min; time 20 min;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2010.0227
  • Filename
    5732737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1473592