Title :
Direct energy gap of Sb2Te3 synthesised by solid-state microwave plasma
Author :
Suriwong, T. ; Thongtem, T. ; Thongtem, S.
Author_Institution :
Dept. of Phys. & Mater. Sci., Chiang Mai Univ., Chiang Mai, Thailand
fDate :
3/1/2011 12:00:00 AM
Abstract :
The usefulness of microwave heating and microwave generation of plasma for solid-state synthesis of Sb2Te3 crystals is reported. Lengths of time and molar ratios of Sb:Te were varied to achieve pure products heated by a 900 W microwave-irradiated plasma. In the present research, the products were Sb2Te3 with a rhombohedral crystal system using 2:2, 2:1.75 and 2:1.5 molar ratios of Sb:Te, and lengths of time of 10 and 20 min. Their different crystallographic planes were also detected, including four Raman shifts at 93.9, 102.6, 139.2 and 263.7 cm-1, and direct energy gaps (Eg) in a range of 0.340-0.515-eV.
Keywords :
Raman spectra; antimony compounds; crystal growth; crystal structure; energy gap; plasma materials processing; semiconductor growth; semiconductor materials; Raman shifts; Sb2Te3; direct energy gap; microwave plasma generation; microwave plasma heating; microwave-irradiated plasma; power 900 W; rhombohedral crystal system; solid-state microwave plasma; time 10 min; time 20 min;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2010.0227