A reduced capacitance concept for high-speed optical position-sensitive devices (PSDs)

Author

Dutta, Achyut Kumar ; Hatanaka, Yoshinori

Author_Institution

Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan

Volume

8

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

780

Lastpage

783

Abstract

Position-sensitive devices (PSDs) in which the junction capacitance is reduced by using a mesh-type resistive layer with 125-μm pitch and 30-μm stripwidth are discussed. The temporal responses to pulsed excitation illuminated at the center are characterized by a rise time of less than 550 ns, which is shorter than that of the conventional type. The 14-mm×14-mm PSD has a junction capacitance of less than 180 pF, which is estimated to be lower than that of a conventional-type PSD by a factor of 2.4. By suitably selecting the mesh pitch and width, it is possible to reduce the temporal response by one or two orders of magnitude

Keywords

high-speed optical techniques; photocapacitance; photodetectors; 125 micron; 14 mm; 30 micron; 550 ns; high-speed optical position-sensitive devices; junction capacitance; mesh-type resistive layer; pitch; pulsed excitation; reduced capacitance concept; rise time; stripwidth; temporal response; Atomic measurements; Biomedical optical imaging; Capacitance; Delay effects; Electrodes; High speed optical techniques; Optical devices; Optical scattering; Particle scattering; Strips;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.54487

Filename

54487